(China (Mainland))
Product Summary
The STE53NC50P is a powerMesh II MOSFET with N-CHANNEL 500V - 0.070W - 53A ISOTOP. It is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Parametrics
STE53NC50P absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 500 V; (2)Drain-gate Voltage (RGS = 20 kW): 500 V; (3)Gate- source Voltage: ±30 V; (4)Drain Current (continuos) at TC = 25℃: 53 A; (5)Drain Current (continuos) at TC = 100℃: 33 A; (6)Drain Current (pulsed): 212 A; (7)Total Dissipation at TC = 25℃: 460 W; (8)Derating Factor: 3.68 W/℃; (9)Peak Diode Recovery voltage slope: 3 V/ns; (10)Insulation Winthstand Voltage (AC-RMS): 2500 V; (11)Storage Temperature: – 65℃ to 150℃; (12)Max. Operating Junction Temperature: 150℃.
Features
STE53NC50P features: (1)high current, high speed switching; (2)swith mode power supplies (smps); (3)dc-ac converters for welding equipment and uninterruptible power supplies and motor driver.
Diagrams
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 STE53NC50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 53 Amp |
Data Sheet |
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STE50DE100 |
STMicroelectronics |
Transistors Bipolar (BJT) POWER MOSFET |
Data Sheet |
Negotiable |
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STE53NA50 |
Other |
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Data Sheet |
Negotiable |
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STE53NC50 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 53 Amp |
Data Sheet |
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