Product Summary

The IRG4PH40UD is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

IRG4PH40UD absolute maximum ratings: (1)VCES Collector-to-Emitter Breakdown Voltage: 1200 V; (2)IC @ TC = 25℃ Continuous Collector Current: 41 A; (3)IC @ TC = 100℃ Continuous Collector Current: 21 A; (4)ICM Pulsed Collector Current: 82 A; (5)ILM Clamped Inductive Load Current: 82 A; (6)IF @ TC = 100℃ Diode Continuous Forward Current: 8.0 A; (7)IFM Diode Maximum Forward Current: 130 A; (8)VGE Gate-to-Emitter Voltage: ± 20 V; (9)PD @ TC = 25℃ Maximum Power Dissipation: 160 W; (10)PD @ TC = 100℃ Maximum Power Dissipation: 65 W; (11)Operating Junction and Storage Temperature Range: -55℃ to + 150℃; (12)Soldering Temperature, for 10 seconds: 300 (0.063 in. (1.6mm) from case ).

Features

IRG4PH40UD features: (1)UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode; (2)New IGBT design provides tighter parameter distribution and higher efficiency than previous generations; (3)IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-247AC package.

Diagrams

IRG4PH40UD package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRG4PH40UD
IRG4PH40UD
International Rectifier
IGBT W/DIODE 1200V 30A TO-247AC
Data Sheet
1-100: $2.30
IRG4PH40UD2-EP
IRG4PH40UD2-EP
International Rectifier
IGBT Transistors 1200V UltraFast 5-40kHz
Data Sheet
0-1: $3.92
1-25: $2.86
25-100: $2.27
100-250: $2.18
IRG4PH40UD-EPBF
IRG4PH40UD-EPBF
International Rectifier
IGBT Transistors 1200V UltraFast 5-40kHz
Data Sheet
0-1: $4.34
1-25: $3.17
25-100: $2.51
100-250: $2.42
IRG4PH40UDPBF
IRG4PH40UDPBF
International Rectifier
IGBT Transistors 1200V UltraFast 5-40kHz
Data Sheet
0-1: $4.64
1-25: $3.39
25-100: $2.69
100-250: $2.58