IRG4PF50WD

IRG4PF50WD, TO-247, insulated gate bipolar transistor, 204 A

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.98~2.98 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.98~2.98

PartNumber:: IRG4PF50WD

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Ally's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-06-07

From Other Seller

Part Number:IRG4PF50WD
US $1.98 - 2.98
ECA1HHG220

US $2.00 - 10.00 / Piece
(0) Remove
MOC3063

US $0.32 - 1.50 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRG4PF50WD is an insulated gate bipolar transistor with ultrafast soft recovery diode.It hasLower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz. The IRG4PF50WD is optimized for performance with IGBTs and is Minimized recovery characteristics reduce noise, EMI and switching losses.

Parametrics

IRG4PF50WD absolute maximum ratings: (1)Collector-to-Emitter Breakdown Voltage: 900 V; (2)Continuous Collector Current: 51 A; (3)Continuous Collector Current: 28 A; (4)Pulsed Collector Current: 204 A; (5)Clamped Inductive Load Current: 204 A; (6)Diode Continuous Forward Current: 16 A; (7)Diode Maximum Forward Current: 204 A; (8)Gate-to-Emitter Voltage: ± 20 V; (9)Maximum Power Dissipation(PD @ TC = 25℃): 200 W; (10)Maximum Power Dissipation(PD @ TC = 100℃): 78 W; (11)Operating Junction and Storage Temperature Range: -55℃ to + 150℃.

Features

IRG4PF50WD features: (1)Optimized for use in Welding and Switch-Mode Power Supply applications; (2)Industry benchmark switching losses improve efficiency of all power supply topologies; (3)50% reduction of Eoff parameter; (4)Low IGBT conduction losses; (5)Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability; (6)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (7)Industry standard TO-247AC package.